23% faster program and 40% energy reduction of carbon nanotube non-volatile memory with over 1011 endurance

Author

Sheyang Ning ; Iwasaki, Tomoko Ogura ; Shimomura, Kazuya ; Johguchi, Koh ; Rosendale, Glen ; Manning, Monte ; Viviani, Darlene ; Rueckes, Thomas ; Takeuchi, Ken

Author_Institution

Chuo Univ., Tokyo, Japan

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

Carbon nanotube (CNT) non-volatile memory provides excellent cell characteristics of >10¹¹ endurance, low power, fast <;5ns array program, and multi-level cell (MLC) potential. For the first time, optimal program methods are investigated considering speed, power and cell variability. Discrete cells are measured and a multiple-pulse reset scheme is proposed to reduce verify-reset time and a gate pulse verify-reset scheme further reduces array program energy by 40%.

Keywords

carbon nanotubes; low-power electronics; random-access storage; C; MLC; carbon nanotube nonvolatile memory; discrete cells; energy reduction; excellent cell characteristics; gate pulse verify-reset scheme; low power array program; multilevel cell; multiple-pulse reset scheme; optimal program; Arrays; Current measurement; Logic gates; Nonvolatile memory; Proposals; Pulse measurements; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894384

Filename

6894384