Title :
Reliability improvement in high aspect ratio contacts and vias filled with blanket tungsten CVD film
Author :
Fukuda, Naoki ; Saito, Tatsuyuki ; Suzuki, Yukihiro ; Fujiwara, Tsuyoshi ; Yamaguchi, Hizuru ; Owada, Nobuo
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
This paper reports a new open failure observed in high aspect ratio contacts and vias filled with blanket tungsten CVD film. This failure mode has been proved to be induced by the poor film quality of the sputtered glue layer at the bottom of a hole. Open failure in contacts has been suppressed by lowering the deposition temperature of the sputtered glue layer together with the optimization of CVD process conditions. Open failure in vias has been suppressed by collimation sputtering of the glue layer at low temperature.
Keywords :
CVD coatings; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; tungsten; CVD process conditions optimization; W; blanket W CVD film; collimation sputtering; deposition temperature; failure mode; film quality; high aspect ratio contacts; open failure; sputtered glue layer; vias; Aluminum; Collimators; Conductivity; Failure analysis; Metallization; Silicon; Sputtering; Substrates; Temperature; Tungsten;
Conference_Titel :
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2031-X
DOI :
10.1109/RELPHY.1995.513649