• DocumentCode
    230451
  • Title

    Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiNTa2O5Ta RRAM device

  • Author

    Goux, L. ; Fantini, Andrea ; Redolfi, A. ; Chen, C.Y. ; Shi, F.F. ; Degraeve, Robin ; Chen, Y.Y. ; Witters, T. ; Groeseneken, Guido ; Jurczak, Malgorzata

  • Author_Institution
    imec, Leuven, Belgium
  • fYear
    2014
  • fDate
    9-12 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We engineer a scalable and CMOS-friendly RRAM stack using down to 3nm ALD-based Ta2O5. The 20nm-sized TiNTa2O5Ta device operated at 50μA exhibits ultra-fast write (~5ns) at moderate voltage (<;2V) with >109 write endurance. We also demonstrate excellent disturb and retention characteristics, which we relate to the appropriate tuning of the oxygen chemical-potential profile along the filament by means of the Ta scavenger material and thickness.
  • Keywords
    CMOS memory circuits; random-access storage; tantalum compounds; titanium compounds; TiN-Ta2O5-Ta; scalable low current operated RRAM device; scavenger electrode; size 20 nm; switching control; Electrodes; Hafnium compounds; Materials; Resistance; Switches; Tuning; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4799-3331-0
  • Type

    conf

  • DOI
    10.1109/VLSIT.2014.6894401
  • Filename
    6894401
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=230451