• DocumentCode
    230460
  • Title

    NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

  • Author

    Wan Gee Kim ; Hyun Min Lee ; Beom Yong Kim ; Kyoo Ho Jung ; Tae Geun Seong ; Seonghyun Kim ; Ha Chang Jung ; Hyo June Kim ; Jong Hee Yoo ; Hyung Dong Lee ; Soo Gil Kim ; Suock Chung ; Kee Jeung Lee ; Jung Hoon Lee ; Hyeong Soo Kim ; Seok Hee Lee ; Jianhua

  • Author_Institution
    R&D Div., SK Hynix Inc., Icheon, South Korea
  • fYear
    2014
  • fDate
    9-12 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, 5Xnm cross point cell array for the low power ReRAM operation was developed with 1S1R cell structure. Through the optimization of both TiOx/TaOx based-1R and NbO2 based-1S stacks with TiN based-electrode, the world´s first and best bipolar switching characteristics with the lowest operation current (20~50uA) and sneak current (~1uA) level were acquired.
  • Keywords
    low-power electronics; random-access storage; 1S1R cell structure; bipolar switching characteristics; cross point cell array; high density cross point ReRAM application; low power ReRAM operation; Arrays; Electrodes; Materials; Resistance; Resistors; Switches; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4799-3331-0
  • Type

    conf

  • DOI
    10.1109/VLSIT.2014.6894405
  • Filename
    6894405
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=230460