In-situ contact formation for ultra-low contact resistance NiGe using carrier activation enhancement (CAE) techniques for Ge CMOS

Author

Miyoshi, Hidenori ; Ueno, Tomohiro ; Akiyama, Kazunari ; Hirota, Yusuke ; Kaitsuka, Takanobu

Author_Institution

Tokyo Electron Ltd., Nirasaki, Japan

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

We first achieved ultra-low NiGe specific contact resistivities (ρ_c´s) of 2.3×10^-9Ωcm² and 1.9×10^-8Ωcm², which were both reduced from the best values ever reported by one order of magnitude, for Ge P- and N-MOS, respectively. The keys to the excellent performance were carrier activation enhancement (CAE) techniques using Ge pre-amorphization implant (PAI) or laser anneal (LA) followed by an in-situ contact process. Impact of ultra-low ρ_c´s on saturation drive current (Id_sat) was also simulated for ITRS 2015 HP nFinFET.

Keywords

CMOS integrated circuits; MOSFET; amorphisation; contact resistance; elemental semiconductors; germanium; laser beam annealing; nickel compounds; CAE techniques; Ge; Ge preamorphization implant; ITRS 2015 HP nFinFET; NMOS; NiGe; PAI; PMOS; carrier activation enhancement techniques; in-situ contact process; laser anneal; saturation drive current; ultra-low NiGe specific contact resistivities; Annealing; Computer aided engineering; Contact resistance; Implants; Lasers; MOS devices; Metals;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894409

Filename

6894409