DocumentCode :
230468
Title :
In-situ contact formation for ultra-low contact resistance NiGe using carrier activation enhancement (CAE) techniques for Ge CMOS
Author :
Miyoshi, Hidenori ; Ueno, Tomohiro ; Akiyama, Kazunari ; Hirota, Yusuke ; Kaitsuka, Takanobu
Author_Institution :
Tokyo Electron Ltd., Nirasaki, Japan
fYear :
2014
fDate :
9-12 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
We first achieved ultra-low NiGe specific contact resistivities (ρc´s) of 2.3×10-9Ωcm2 and 1.9×10-8Ωcm2, which were both reduced from the best values ever reported by one order of magnitude, for Ge P- and N-MOS, respectively. The keys to the excellent performance were carrier activation enhancement (CAE) techniques using Ge pre-amorphization implant (PAI) or laser anneal (LA) followed by an in-situ contact process. Impact of ultra-low ρc´s on saturation drive current (Idsat) was also simulated for ITRS 2015 HP nFinFET.
Keywords :
CMOS integrated circuits; MOSFET; amorphisation; contact resistance; elemental semiconductors; germanium; laser beam annealing; nickel compounds; CAE techniques; Ge; Ge preamorphization implant; ITRS 2015 HP nFinFET; NMOS; NiGe; PAI; PMOS; carrier activation enhancement techniques; in-situ contact process; laser anneal; saturation drive current; ultra-low NiGe specific contact resistivities; Annealing; Computer aided engineering; Contact resistance; Implants; Lasers; MOS devices; Metals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
0743-1562
Print_ISBN :
978-1-4799-3331-0
Type :
conf
DOI :
10.1109/VLSIT.2014.6894409
Filename :
6894409
Link To Document :
بازگشت