• DocumentCode
    230481
  • Title

    Direct measurement of the dynamic variability of 0.120µm2 SRAM cells in 28nm FD-SOI technology

  • Author

    El Husseini, Joanna ; Garros, Xavier ; Subirats, Alexandre ; Makosiej, Adam ; Weber, Olivier ; Thomas, O. ; Huard, Vincent ; Federspiel, Xavier ; Reimbold, Gilles

  • Author_Institution
    CEA-Leti, Grenoble, France
  • fYear
    2014
  • fDate
    9-12 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Dynamic variability of 28nm FD-SOI high density SRAMs has been directly measured and carefully modeled using a new technique based on the Supply Read Retention Voltage (SRRV) metric. It is proven that, for this technology, N&PBTI induced variability has only a small impact on the SRAM read stability after 10 years working at operating conditions.
  • Keywords
    SRAM chips; negative bias temperature instability; silicon-on-insulator; FD-SOI high density SRAM; FD-SOI technology; NBTI induced variability; PBTI induced variability; SRAM cells; SRAM read stability; SRRV metric; dynamic variability; operating conditions; size 28 nm; supply read retention voltage; Analytical models; Data models; SRAM cells; Stress; Stress measurement; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4799-3331-0
  • Type

    conf

  • DOI
    10.1109/VLSIT.2014.6894415
  • Filename
    6894415
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=230481