Systematic study of RTN in nanowire transistor and enhanced RTN by hot carrier injection and negative bias temperature instability

Author

Ota, Kaoru ; Saitoh, Masatoshi ; Tanaka, C. ; Matsushita, Daisuke ; Numata, T.

Author_Institution

Corp. R&D Center, Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

We experimentally study the random telegraph noise (RTN) in nanowire transistor (NW Tr.) with various widths (W), lengths (L), and heights (H). Time components of RTN such as time to capture (τ_c) and emission (τ_e) are independent of NW size, while threshold voltage fluctuation (ΔV_th) by RTN can be well fitted with 1/{L(W+2H)}^0.5 corresponding to the conventional carrier number fluctuations regardless of the side surface orientation. Hot carrier injection (HCI) and negative bias temperature instability (NBTI) induced additional carrier traps leading to the increase in the number of observed RTN. Moreover, ΔV_th is enhanced by HCI and NBTI and enhancement of ΔV_th becomes larger in narrower W.

Keywords

electron traps; hole traps; hot carriers; nanowires; negative bias temperature instability; transistors; carrier traps; hot carrier injection; nanowire transistor; negative bias temperature instability; random telegraph noise; threshold voltage; Fluctuations; Human computer interaction; Logic gates; Size measurement; Stress; Threshold voltage; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894417

Filename

6894417