Title :
Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta2O5/TaOx/TiO2/TiN) with excellent performance (JMAX > 107A/cm2)
Author :
Jiyong Woo ; Jeonghwan Song ; Kibong Moon ; Ji Hyun Lee ; Euijun Cha ; Prakash, Aravind ; Daeseok Lee ; Sangheon Lee ; Jaesung Park ; Yunmo Koo ; Chan Gyung Park ; Hyunsang Hwang
Author_Institution :
Dept. of Mat. Sci. & Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
Abstract :
We demonstrate a selector device with excellent performances (JMAX > 107A/cm2, switching speed <; 20ns) at the 30nm cell size. Furthermore, these promising device characteristics were achieved in a fully CMOS compatible stack (W/Ta2O5/TaOx/TiO2/TiN) with extremely thin oxide layer (<; 10nm). Through the comprehensive understanding on the exponential I-V curve, the effect of intrinsic/extrinsic factors such as scaling (area and thickness), and parasitic components were systemically investigated.
Keywords :
CMOS integrated circuits; integrated circuit reliability; random-access storage; scaling circuits; tantalum compounds; titanium compounds; tungsten compounds; CMOS compatible stack; W-Ta2O5-TaOx-TiO2-TiN; area scaling; device characteristics; electrical characteristics; excellent performance; exponential I-V curve; intrinsic-extrinsic factors effect; parasitic components; reliability characteristics; scaled tunnel barrier selector device; size 30 nm; switching memory RRAM; switching speed; thickness scaling; thin oxide layer; Current density; Electrodes; Performance evaluation; Reliability; Resistance; Switches; Tin;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894431
