Improved field emitter arrays with high-aspect-ratio current limiters and self-aligned gates

Author

Guerrera, Stephen A. ; Akinwande, Akintunde Ibitayo

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA

fYear

2014

fDate

6-10 July 2014

Firstpage

25

Lastpage

26

Abstract

We report an updated device structure and fabrication process for the creation of silicon field emitter arrays with integrated silicon vertical current limiters for applications that require high performance cold cathode electron sources. The improved device includes thicker dielectric films to prevent dielectric breakdown and leakage current from the gate electrode to the substrate, and metalized probe pads to reduce electron interception by the gate electrode.

Keywords

cathodes; electric breakdown; elemental semiconductors; field emitter arrays; leakage currents; microfabrication; silicon; Si; cold cathode electron sources; dielectric breakdown; dielectric films; electron interception; field emitter arrays; gate electrode to; high-aspect-ratio current limiters; leakage current; metalized probe pads; self-aligned gates; silicon vertical current limiters; Anodes; Current limiters; Field emitter arrays; Logic gates; Silicon; Surface morphology; FEA; Silicon field emitter arrays; field emission; self-aligned gate; vertical current limiter;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2014 27th International

Conference_Location

Engelberg

Print_ISBN

978-1-4799-5306-6

Type

conf

DOI

10.1109/IVNC.2014.6894742

Filename

6894742