DocumentCode
230591
Title
Temperature dependence of the field emission from monolayer graphene
Author
Wenqing Chen ; Yunkun Su ; Huanjun Chen ; Shaozhi Deng ; Ningsheng Xu ; Jun Chen
Author_Institution
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear
2014
fDate
6-10 July 2014
Firstpage
36
Lastpage
37
Abstract
Temperature dependence of the field emission from monolayer graphene was investigated in order to understand the field emission process from graphene. The results show that the field emission current under the same voltage increases dramatically with temperature rising from 300 K to 573 K. These results may be associated with a narrow energy gap of morphological disordered graphene, in which electrons can be excited from valence band to conduction band easily by increasing temperature.
Keywords
conduction bands; electron field emission; energy gap; graphene; monolayers; valence bands; C; conduction band; electron field emission; monolayer graphene; morphological disordered graphene; narrow energy gap; temperature dependence; valence band; Cities and towns; Educational institutions; Monolayer graphene; field emission; temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location
Engelberg
Print_ISBN
978-1-4799-5306-6
Type
conf
DOI
10.1109/IVNC.2014.6894747
Filename
6894747
Link To Document