Title :
New profiled silicon PIN photodiode for scintillation detector
Author :
Saitoh, Y. ; Akamine, T. ; Satoh, K. ; Inoue, M. ; Yamanaka, J. ; Aoki, K. ; Miyahara, S. ; Kamiya, M. ; Ikeda, H. ; Avrillon, S. ; Okuno, S.
Author_Institution :
Seiko Instrum. Inc., Chiba, Japan
fDate :
30 Oct-5 Nov 1994
Abstract :
Silicon photodiodes (planar PIN) are employed for the read out of scintillation shower counters. We have already reported on a new doping method called molecular layer doping (MLD) which has been developed for a quarter-micron ULSI process. In this study, several types of PIN photodiodes, in which a p+ layer was formed by MLD (MLD-PIN) or BF2 ion implantation (BF2 I/I-PIN), have been examined. The MLD-PIN has a shallow p+ junction depth (xj) with sufficient high surface concentration, and simply and easily provides good performance for a short-wavelength photo sensitivity
Keywords :
detector circuits; doping profiles; elemental semiconductors; ion implantation; nuclear electronics; p-i-n photodiodes; silicon; solid scintillation detectors; Si:BF2; ion implantation; molecular layer doping; profiled silicon PIN photodiode; quarter-micron ULSI process; scintillation detector; scintillation shower counters; shallow p+ junction depth; short-wavelength photo sensitivity; surface concentration; Amorphous materials; Annealing; Boron; Doping; Ion implantation; PIN photodiodes; Radiation detectors; Scintillation counters; Silicon; Surface resistance;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record
Conference_Location :
Norfolk, VA
Print_ISBN :
0-7803-2544-3
DOI :
10.1109/NSSMIC.1994.474382
