DocumentCode :
230611
Title :
In-situ measurement of temperature dependence of emission current and pressure of a fully-sealed ZnO nanowire field emission device
Author :
Ke, Y.L. ; Liao, M.X. ; Li, Y.F. ; Deng, S.Z. ; Xu, N.S. ; Jun Chen
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear :
2014
fDate :
6-10 July 2014
Firstpage :
57
Lastpage :
58
Abstract :
In order to evaluate the performance of ZnO nanowire field emission display under different temperature, the temperature dependence of field emission current of a fully-sealed diode-structured field emission device using ZnO nanowire cold cathode was studied when the temperature changed from -60°C to 80°C. The pressure inside the device was also measured. It is found that the emission current decreases with increasing temperature, which is attributed to the increasing pressure. The findings are crucial to optimize the manufacture process of the FED using ZnO nanowire cold cathode.
Keywords :
II-VI semiconductors; cathodes; electron field emission; nanowires; semiconductor device manufacture; temperature measurement; wide band gap semiconductors; zinc compounds; ZnO; field emission current; fully sealed diode structured field emission device; nanowire cold cathode; nanowire field emission device; temperature dependence; Cathodes; Zinc oxide; ZnO nanowire; field emission display; field emitter; temperature dependent;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location :
Engelberg
Print_ISBN :
978-1-4799-5306-6
Type :
conf
DOI :
10.1109/IVNC.2014.6894757
Filename :
6894757
Link To Document :
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