High performance carbon nanotube emitters beam (C-beam) for display device application

We introduced a carbon nanotube electron beam (C-beam) exposure technique for thin films for display devices. As an electron source, the CNT emitters were placed on cathode electrode. Electrons through gate mesh, with higher accelerated energy, impact thin film on the anode plate. For display device application, amorphous silicon (a-Si:H) thin films were deposited on glass substrate and then C-beams exposed. After moderated C-beam exposure, the silicon film changes to phase of crystalline one. The structural modification was confirmed with Raman spectrum and the enhanced electrical performances were measured with I-V systems. The silicon crystalline properties were strongly depending on the C-Beam exposure conditions.