Title :
A high frequency fully differential BiCMOS operational amplifier
Author :
Karanicolas, Andrew ; O, Kenneth ; Wang, John ; Lee, Hae-Seung ; Reif, Rafael
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
A BiCMOS differential operational amplifier designed for use in switched-capacitor circuits is presented. This BiCMOS op-amp offers an infinite input resistance, a DC gain of 100 dB, a unity-gain frequency of 90 MHz with 45° phase margin, and a slew rate of 150 V/μs. The op-amp is unity gain stable with 7 pF of capacitive loading. The circuit is operated from a ±5-V power supply and dissipates 125 mW. The op-amp is integrated in the 3.0-GHz, 2-RGmm MIT BiCMOS process with an active die area of 1.0 mm×1.2 mm
Keywords :
BIMOS integrated circuits; differential amplifiers; integrated circuit technology; operational amplifiers; switched capacitor networks; 100 dB; 125 mW; 2 micron; 7 pF; 90 MHz; DC gain; MIT BiCMOS process; active die area; capacitive loading; fully differential BiCMOS operational amplifier; infinite input resistance; phase margin; slew rate; switched-capacitor circuits; unity gain stable; unity-gain frequency; Analog circuits; BiCMOS integrated circuits; CMOS logic circuits; Differential amplifiers; Epitaxial layers; Frequency; Operational amplifiers; Switched capacitor circuits; Switching circuits; Transconductance;
Conference_Titel :
Custom Integrated Circuits Conference, 1990., Proceedings of the IEEE 1990
Conference_Location :
Boston, MA
DOI :
10.1109/CICC.1990.124688
