High power and small aspect ratio 980 nm ridge waveguide laser diodes consisted of asymmetrically expanded optical field normal to the active layer

Author

Shigihara, Kimio ; Kawasaki, Kazushige ; Yoshida, Yasuaki ; Yamamura, Shin Ichi ; Yagi, Tetsuya ; Omura, Etsuji

Author_Institution

High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2002

fDate

17-22 Mar 2002

Firstpage

715

Lastpage

716

Abstract

The new ridge waveguide LD consisted of layers to support asymmetrically expanded optical field normal to the active layer has been proposed in order to satisfy the increase of kink free output power and the reduction of aspect ratio. More than 650 mW kink free output power and less than 2.5 aspect ratio have been achieved by the proposed LD. Good aging performances are also expressed in the proposed LD. It is believed that the LDs are suitable for realizing 980 nm modules with high coupling efficiency and high power EDFAs.

Keywords

infrared sources; laser transitions; modules; optical transmitters; ridge waveguides; semiconductor lasers; waveguide lasers; 650 mW; 980 nm; 980 nm modules; active layer; aspect ratio reduction; asymmetrically expanded optical field; high coupling efficiency; high power EDFAs; kink free output power; mW kink free output power; optical transmitters; ridge waveguide LD; Diode lasers; High speed optical techniques; Optical control; Optical refraction; Optical variables control; Optical waveguides; Photodetectors; Refractive index; Substrates; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002

Print_ISBN

1-55752-701-6

Type

conf

DOI

10.1109/OFC.2002.1036670

Filename

1036670