Stable field emission from ZnO nanowires grown on 3D graphene foam

Author

Shuyi Ding ; Haiyuan Cui ; Wei Lei ; Xiaobing Zhang ; Baoping Wang

Author_Institution

Display R&D Center, Southeast Univ., Nanjing, China

fYear

2014

fDate

6-10 July 2014

Firstpage

178

Lastpage

179

Abstract

Graphene was grown directly on nickel foam (NF) to form three dimensional graphene foam (GF), followed by growth of zinc oxide nanowires (ZNWs) on the surface of GF by hydrothermal method. In comparison with pristine GF, the ZNW/GF hybrid structure exhibited efficient field emission with a low turn-on field of 1.7V/μm, a low threshold field of 2.4 V/μm, high emission spot density, a high field enhancement factor of 1878 and excellent emitting stability. We proposed that the introduction of ZNWs on the surface of GF can increase the number of emission points, enhance tunneling probability, and lead to optimized field emission for the hybrid emitters. In addition, the graphene buffer layer provided a better electrical contact with ZNW, which also benefit to field emission.

Keywords

II-VI semiconductors; buffer layers; electrical contacts; electron field emission; foams; graphene; nanofabrication; nanowires; semiconductor-insulator boundaries; tunnelling; wide band gap semiconductors; zinc compounds; 3D graphene foam; ZnO-C; buffer layer; electrical contact; emission points; emission spot density; emitting stability; field emission; field enhancement factor; hybrid emitter structure; hydrothermal method; nickel foam; threshold field; tunneling probability; turn-on field; zinc oxide nanowires; Cathodes; Educational institutions; Iron; Zinc; ZnO nanowires; cathode; field emission; graphene foam;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2014 27th International

Conference_Location

Engelberg

Print_ISBN

978-1-4799-5306-6

Type

conf

DOI

10.1109/IVNC.2014.6894799

Filename

6894799