Title :
The relation between oxide degradation and oxide breakdown
Author :
Felsch, C. ; Rosenbaum, E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
A novel oxide stressing procedure is used to determine the relation between oxide degradation and oxide breakdown. Results suggest that the mechanism of oxide breakdown depends on the oxide thickness. In 5 and 7 nm oxides, electron trap generation correlates with oxide breakdown. In 10 nm oxide, positive charge trapping correlates with oxide breakdown.
Keywords :
MIS structures; MOS capacitors; dielectric thin films; electric breakdown; electron traps; hole traps; interface states; leakage currents; silicon compounds; 5 to 10 nm; MOS capacitors; SiO/sub 2/; electron trap generation; interface traps; nMOSFET; oxide breakdown; oxide degradation; oxide stressing procedure; oxide thickness; positive charge trapping; stress induced leakage currents; Charge carrier processes; Degradation; Electric breakdown; Electron traps; Frequency; MOSFET circuits; Monitoring; Stress; Virtual manufacturing; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2031-X
DOI :
10.1109/RELPHY.1995.513667
