DocumentCode :
2307460
Title :
High volumetric capacitance low fired X7R MLC capacitor
Author :
Maher, Galeb H. ; Prokopowicz, Thomas I. ; Bheemineni, Veerabhadrarao
Author_Institution :
MRA Labs. Inc., North Adams, MA, USA
fYear :
1993
fDate :
1-4 Jun 1993
Firstpage :
280
Lastpage :
284
Abstract :
A new low fired, high permittivity (K 4400) X7R dielectric suitable for use in MLC capacitors with active layer thickness of 10 μ or less has been developed. The dielectric is based on fine grain barium titanate powder with small amount of sintering aid to promote densification of the MLCs at or below 1100°C. 70Ag/30Pd was used for the internal electrode. MLCs in 0805-130 nF and 1206-330 nF chips gave an active volumetric capacitance in excess of 6000 μF/in3. The following is a summary of the properties: fired density ≈97.5% of theoretical; aging rate at 25°C is -2.0% per decade; insulation resistance at 100 volts at 25°C, 2 minutes ≈105 ohm-farad; ultimate dielectric breakdown ≈100 V/μ
Keywords :
ageing; barium compounds; capacitors; ceramics; dielectric materials; dielectric thin films; electric breakdown of solids; permittivity; sintering; 10 micron; 130 nF; 330 nF; 70Ag/30Pd internal electrode; AgPd; BaTiO3; MLC capacitor; X7R dielectric; aging rate; dielectric breakdown; fine grain powder; high permittivity type; high volumetric capacitance; low fired type; Aging; Barium; Capacitance; Capacitors; Dielectric breakdown; Dielectrics and electrical insulation; Electrodes; Permittivity; Powders; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 1993. Proceedings., 43rd
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0794-1
Type :
conf
DOI :
10.1109/ECTC.1993.346828
Filename :
346828
Link To Document :
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