Title :
Suppressed process-induced damage in N/sub 2/O-annealed SiO/sub 2/ gate dielectrics
Author :
Joshi, A.B. ; Hann, R. ; Chung, Lawrence ; Bhat, M. ; Cho, T.H. ; Min, B.W. ; Kwong, D.L.
Author_Institution :
Telecommunications, Rockwell Int. Corp., Newport Beach, CA, USA
Abstract :
The impact of N/sub 2/O-nitridation of SiO/sub 2/ on gate oxide reliability against plasma damage is investigated here. It is observed that nitridation of thermal oxide significantly enhances the resistance of gate oxide against plasma induced charging. It is also observed that increasing N/sub 2/O nitridation enhances the immunity to plasma damage progressively. An optimum combination of N/sub 2/O anneal temperature and flow-rate can be used to obtain highly reliable gate dielectrics within reasonable thermal budgets. The impact of N/sub 2/O-nitridation of SiO/sub 2/ on gate oxide reliability against plasma.
Keywords :
MOS capacitors; MOSFET; annealing; dielectric thin films; integrated circuit reliability; nitridation; nitrogen compounds; semiconductor device reliability; semiconductor-insulator boundaries; silicon compounds; N/sub 2/O; N/sub 2/O-annealed gate dielectrics; Si-SiO/sub 2/; SiNO; SiO/sub 2/ gate dielectrics; anneal temperature; flow-rate; gate oxide reliability; nitridation; plasma damage; plasma induced charging; suppressed process-induced damage; thermal oxide; twin-well CMOS process; Annealing; Dielectrics; Etching; Hot carriers; MOSFET circuits; Plasma applications; Plasma materials processing; Plasma simulation; Plasma temperature; Thermal resistance;
Conference_Titel :
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2031-X
DOI :
10.1109/RELPHY.1995.513669
