Oxidation endurance of boron nitride nanotube field emitters

Author

Yenan Song ; Dong Hoon Shin ; Ki Nam Yun ; Cheol Jin Lee ; Yoon-Ho Song ; Milne, W.I.

Author_Institution

Dept. of Micro/Nano Syst., Korea Univ., Seoul, South Korea

fYear

2014

fDate

6-10 July 2014

Firstpage

235

Lastpage

236

Abstract

Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. In this work, the thermal annealed BNNTs exhibit a high maximum emission current density of 8.39 mA/cm² and robust long-term emission stability. The results reveal that BNNTs can be a promising emitter material for field emission devices under harsh environments.

Keywords

annealing; boron compounds; current density; electron affinity; field emitter arrays; nanostructured materials; nanotube devices; oxidation; BN; boron nitride nanomaterials; boron nitride nanotube field emitters; cold electron emission material; emission current density; emission stability; emitter material; field emission devices; field emission properties; negative electron affinity; oxidation endurance; temperature 600 degC; thermal annealing; Annealing; Mixers; Nanotechnology; Thermal engineering; Boron nitride nanotubes; Field emission; Oxidation endurance;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2014 27th International

Conference_Location

Engelberg

Print_ISBN

978-1-4799-5306-6

Type

conf

DOI

10.1109/IVNC.2014.6894830

Filename

6894830