Title :
The role of gallium in CuInSe2 solar cells fabricated by a two-stage method
Author :
Jensen, Cynthia L. ; Tarrant, Dale E. ; Ermer, James H. ; Pollock, Gary A.
Author_Institution :
Siemens Solar Ind., Camarillo, CA, USA
Abstract :
Incorporation of Ga in CuInSe2 thin film solar cells formed by a two-stage method results in improved adhesion between the CuInSe2 absorber layer and the Mo back electrode. The original intent of incorporating Ga was to increase the bandgap by forming a homogeneous CuIn1-xGaxSe2 quaternary absorber. Rather than the expected increase in bandgap by uniform substitution of Ga for In, adhesion was improved by the formation of a Ga-rich interfacial layer between the absorber and the molybdenum. In addition to improved adhesion, an increase in efficiency due to improved open circuit voltage was observed. Structural models for the absorber layer are proposed based on Auger analysis and solar cell performance data
Keywords :
adhesion; copper compounds; electrodes; energy gap; gallium compounds; indium compounds; semiconductor thin films; solar cells; Auger analysis; CuInGaSe2; CuInSe2; Mo; absorber layer; adhesion; back electrode; bandgap; efficiency; homogeneous CuIn1-xGaxSe2 quaternary absorber; interfacial layer; open circuit voltage; performance; solar cells; structural models; thin film semiconductor; two-stage fabrication method; Adhesives; Circuits; Electrodes; Equations; Gallium; Glass; Optical films; Photonic band gap; Photovoltaic cells; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347030
