DocumentCode
2310077
Title
Electro-optical and photoelectrochemical studies of CuIn3Se5 chalcopyrite films
Author
Kessler, J. ; Schmid, D. ; Schaffler, R. ; Schock, H.W. ; Menezes, Shalini
Author_Institution
Inst. fur Phys. Elektronik, Stuttgart Univ., Germany
fYear
1993
fDate
10-14 May 1993
Firstpage
549
Lastpage
554
Abstract
The In-rich surface layer detected on CuInSe2 thin films was recently identified as CuIn3Se5. This material has been synthesized as tentatively single phase thin films using three-source evaporation. The films have been characterized using electro-optical, surface analytical and photoelectrochemical techniques. A direct band gap of 1.2-1.3 eV, n-type conductivity and a photovoltage of 0.46 V at the CuIn3Se5/acidic iodide electrolyte have been measured. This paper presents results of the synthesis and characterization for the CuIn3Se5 films, and explores the feasibility of a new n-CuIn3Se5 based thin-film cell
Keywords
copper compounds; electro-optical effects; electrochemistry; indium compounds; photochemistry; photoconductivity; semiconductor thin films; solar cells; ternary semiconductors; CuIn3Se5; CuIn3Se5 chalcopyrite films; In-rich surface layer; direct band gap; electro-optical; n-type conductivity; photoelectrochemical techniques; photovoltage; semiconductor; single phase thin films; solar cells; three-source evaporation; Coaxial components; Energy measurement; Glass; Optical films; Optical microscopy; Scanning electron microscopy; Spectroscopy; Substrates; Transistors; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location
Louisville, KY
Print_ISBN
0-7803-1220-1
Type
conf
DOI
10.1109/PVSC.1993.347035
Filename
347035
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