Title :
Large-area ZnO films grown by photo-MOCVD and their application to a-Si solar cells
Author :
Wenas, Wilson W. ; Yoshino, Masahiro ; Tabuchi, Katsuya ; Yamada, Akira ; Konagai, Makoto ; Takahashi, Kiyoshi
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Abstract :
Large-area ZnO films with high-transparency and high-conductivity were successfully grown on the 10×10 cm2 substrates by the photo-MOCVD technique at a very low temperature of 135°C. The films have a good uniformity in thickness, resistivity and crystallinity with a deviation level of 5%. The obtained ZnO films were applied to a-Si solar cells as a TCO and a conversion efficiency of as high as 12.0% (AM-1.5, area 3 mm×3 mm) was obtained
Keywords :
CVD coatings; II-VI semiconductors; amorphous semiconductors; chemical vapour deposition; elemental semiconductors; materials preparation; semiconductor growth; semiconductor thin films; silicon; solar cells; zinc compounds; 12 percent; 135 C; Si; ZnO; a-Si solar cells; conversion efficiency; high-conductivity; high-transparency; large-area ZnO films; photo-MOCVD growth; transparent conducting oxide; uniform crystallinity; uniform resistivity; uniform thickness; Conductive films; Conductivity; Gases; Glass; Light sources; MOCVD; Photovoltaic cells; Plasma temperature; Surface morphology; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347095
