DocumentCode :
2311070
Title :
An investigation of the effect and nature of shunts in a-Si solar cells
Author :
Bennett, M. ; Newton, J. ; Poplawski, C. ; McMahon, T.
Author_Institution :
Thin Film Div., Solarex Corp., Newtown, PA, USA
fYear :
1993
fDate :
10-14 May 1993
Firstpage :
867
Lastpage :
871
Abstract :
Shunted cell and module segments cause a reduction in initial efficiency and yield, and can also lead to increased degradation. Shunts in small area (0.25 cm2) cells are apparently the result of a number of small defects which are grouped together in fields and are hypothesized to be linked to imperfections in the tin oxide. The defects which are active in small area diodes also affect large area modules. Modules suffer as well from larger shunt-causing defects which occur preferentially near the module perimeter. The effect of shunting on module initial efficiency can be nearly eliminated by moving the laser isolation scribe 1/2" to 1" away from the edge of the module. The best modules lose only about 15% of their initial efficiency as a result of prolonged light-soaking; however, they more typically lose about 18-25%. Much of this excess degradation can be attributed to shunt formation
Keywords :
amorphous semiconductors; crystal defects; elemental semiconductors; semiconductor device testing; silicon; solar cells; Si; a-Si solar cells; degradation; grouped defects; initial efficiency reduction; laser isolation scribe; prolonged light-soaking; shunt-causing defects; shunts; small area diodes; tin oxide imperfections; Conductivity; Dielectric breakdown; Diodes; Laboratories; Photovoltaic cells; Renewable energy resources; Stability; Thermal degradation; Tin; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
Type :
conf
DOI :
10.1109/PVSC.1993.347107
Filename :
347107
Link To Document :
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