DocumentCode :
2311085
Title :
Second controlled light-soaking experiment for amorphous silicon modules
Author :
Luft, W. ; von Roedern, B. ; Stafford, B. ; Mrig, L.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fYear :
1993
fDate :
10-14 May 1993
Firstpage :
860
Lastpage :
866
Abstract :
Dual-junction and triple-junction amorphous silicon modules from three manufacturers were subjected to light soaking at 1-sun intensity at 50°C, loaded to the maximum power point, for 1000-2000 hours, with annealing to 70°C in the dark after 1000 hours. Performance characterization was done periodically, both under a pulsed solar simulator and outdoors. Aperture-area efficiencies as high as 9.1% were obtained after 1000 hours of light-soaking. The power output after 1000 hours of light soaking and subsequent partial annealing ranged from 77% to 92% of the initial power output. The recovery in power due to annealing was 4%-6.5%. For a-Si/a-Si-type modules, stabilized performance was reached before 1000 hours. The validity of the results is discussed in detail
Keywords :
amorphous semiconductors; annealing; elemental semiconductors; semiconductor device testing; silicon; solar cells; 1-sun intensity; 1000 to 2000 h; 50 C; 70 C; 9.1 percent; Si; a-Si/a-Si-type modules; amorphous silicon modules; annealing; aperture-area efficiencies; controlled light-soaking experiment; dual-junction; power recovery; pulsed solar simulator; solar cells; solar modules; triple-junction; Amorphous silicon; Annealing; Apertures; Glass; Glow discharges; Lighting control; Manufacturing; Photonic band gap; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
Type :
conf
DOI :
10.1109/PVSC.1993.347108
Filename :
347108
Link To Document :
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