Title :
Commercial-Off-the-Shelf DC-DC converters for high energy physics detectors for the sLHC upgrade
Author :
Dhawan, S. ; Baker, O. ; Chen, H. ; Khanna, R. ; Kierstead, J. ; Lanni, F. ; Lynn, D. ; Mincer, A. ; Musso, C. ; Rescia, S. ; Smith, H. ; Tipton, P. ; Weber, M.
Author_Institution :
Yale Univ., New Haven, CT, USA
Abstract :
A new generation of commercial-off-the-shelf (COTS) buck-type converters built using advanced short channel "high voltage" CMOS processes have the potential to operate near the interaction region of the proposed Super Large Hadron Collider (sLHC) upgraded accelerator. The benefit would be a simpler DC power distribution system and an increase of the overall power efficiency by allowing higher voltage power delivery to the front-end electronics, thus limiting the Ohmic losses. The devices must operate in a high magnetic field and be able to withstand both high doses of ionizing radiation and large neutron fluence. These converters are to be mounted on the same readout boards as the sensitive front-end electronics or in close proximity without introducing any additional noise due to the high switching frequencies. Radiation hardness and noise test results will be reported.
Keywords :
DC-DC power convertors; nuclear electronics; power systems; readout electronics; DC power distribution system; Super Large Hadron Collider upgraded accelerator; advanced short channel CMOS processes; commercial-off-the-shelf DC-DC converters; commercial-off-the-shelf buck-type converters; high energy physics detectors; high magnetic field; high switching frequencies; ionizing radiation; large neutron fluence; noise test results; radiation hardness results; readout boards; sLHC upgrade; sensitive front-end electronics; CMOS process; DC-DC power converters; Detectors; Ionizing radiation; Large Hadron Collider; Magnetic fields; Neutrons; Power distribution; Switching converters; Voltage; DC-DC Power Conversion; MOSFETs; Noise; Radiation Effects;
Conference_Titel :
Real Time Conference, 2009. RT '09. 16th IEEE-NPSS
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-4454-0
DOI :
10.1109/RTC.2009.5322122