DocumentCode
2311457
Title
Study PBTI and NBTI of GAA-MNC TFTs
Author
Kang, Tsung-Kuei ; Wang, Chun-Kai ; Tsai, I-Hsien ; Hung, Ruei-Sheng ; Chen, Yun-Feng ; Wu, Wen-Fa
Author_Institution
Dept. of Electron. Eng., Feng-Chia Univ., Taichung, Taiwan
fYear
2010
fDate
20-22 Oct. 2010
Firstpage
1
Lastpage
3
Abstract
GAA-MNC TFT shows higher on-current, higher mobility, steeper subthreshold swing and lower threshold voltage than CP TFT. In this letter, we study in view of PBTI and NBTI of GAA-MNC TFT. Under room temperature, the PBTI or NBTI of GAA-MNC TFT show more serious degradation than CP TFT. In order to improve reliability, we use plasma to passivate defect in the oxide/channel interface.
Keywords
nanowires; passivation; plasma CVD coatings; thin film transistors; GAA-MNC TFT; LPCVD; NBTI; PBTI; gate all around TFT; low pressure chemical vapor deposition; multiple nanowire channels; oxide-channel interface; passivate defect; temperature 293 K to 298 K; Logic gates; Plasmas; Reliability; Stress; Strips; Temperature; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems Packaging Assembly and Circuits Technology Conference (IMPACT), 2010 5th International
Conference_Location
Taipei
ISSN
2150-5934
Print_ISBN
978-1-4244-9783-6
Electronic_ISBN
2150-5934
Type
conf
DOI
10.1109/IMPACT.2010.5699506
Filename
5699506
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