Title :
I-III-VI2 multinary solar cells based on CuInSe2
Author :
Tarrant, D. ; Ermer, J.
Author_Institution :
Siemens Solar Ind., Camarillo, CA, USA
Abstract :
Homogeneous bandgap (0.95 to 1.43 eV) and graded bandgap I-III-VI 2 multinary absorber layers have been fabricated using a two-stage method. Sulfur has been added to increase the bandgap either throughout the absorber or within the depletion region. Open circuit voltages of 728 mV have been achieved with Cu(In,Ga)(Se,S)2 high bandgap absorbers. Active area efficiencies of over 15% have been achieved using graded I-III-VI2 absorber layers. Absorber composition and structure of these devices are presented. Advantages of graded bandgap absorbers for achieving higher efficiency are discussed. Differences in performance are related to microscopic and macroscopic characteristics that are dependent on sulfur content and absorber structure
Keywords :
copper compounds; energy gap; gallium compounds; indium compounds; solar cells; ternary semiconductors; 0.95 to 1.43 EeV; 728 mV; CuGaS2; CuGaSe2; CuInS2; CuInSe2; I-III-VI2 semiconductors; absorber layers; active area; depletion region; fabrication; graded bandgap; higher efficiency; homogeneous bandgap; macroscopic characteristics; microscopic characteristics; open circuit voltage; performance; solar cells; Absorption; Electrodes; Glass; Photonic band gap; Photovoltaic cells; Plasma waves; Temperature dependence; Testing; Transistors; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347153
