DocumentCode :
2311807
Title :
Nondestructive measurement of bulk lifetime and surface recombination velocities
Author :
Ling, Z.G. ; Ajmera, P.K. ; Kousik, G.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA
fYear :
1993
fDate :
10-14 May 1993
Firstpage :
360
Lastpage :
363
Abstract :
Bulk lifetime and surface recombination velocities at both the front and the rear surfaces are important parameters that affect the performance of solar cells. In the author´s earlier work (see J. Appl Phys., vol. 72, p.141 (1992)), they presented a detailed theoretical analysis for a contactless nondestructive technique to obtain these parameters. Here, they present the first experimentally measured data using this new approach. Moreover, the earlier analytical work has now been extended to also provide an estimate of the sensitivity of the extracted parameters to errors in experimental measurements. Results on measurements on single crystal silicon wafers are provided as an example
Keywords :
carrier lifetime; electron-hole recombination; elemental semiconductors; nondestructive testing; silicon; solar cells; Si; bulk lifetime; front surface; nondestructive measurement; parameter sensitivity; rear surface; single crystal silicon wafers; solar cells; surface recombination velocities; Data mining; Laboratories; Laser beams; Laser excitation; Laser modes; Laser theory; Optical surface waves; Probes; Radiative recombination; Velocity measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
Type :
conf
DOI :
10.1109/PVSC.1993.347155
Filename :
347155
Link To Document :
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