Title :
III–V quantum dot lasers on Si substrates by wafer bonding
Author :
Tanabe, Katsuaki ; Arakawa, Yasuhiko
Author_Institution :
Inst. for Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
Abstract :
We present 1.3 μm InAs/GaAs quantum dot Fabry-Perot and photonic crystal nanocavity lasers on Si substrates fabricated by wafer bonding, with thresholds of 205 A/cm2 and 2 μW, respectively, the lowest of lasers on silicon.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; laser cavity resonators; nanophotonics; optical fabrication; photonic crystals; quantum dot lasers; wafer bonding; III-V quantum dot lasers; InAs-GaAs-Si; Si; Si substrates; photonic crystal nanocavity laser; power 2 muW; quantum dot Fabry-Perot nanocavity laser; wafer bonding; wavelength 1.3 mum; Gallium arsenide; Quantum dot lasers; Silicon; Substrates; Wafer bonding; Waveguide lasers;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6359246
