Title :
Updated contour plots for the design of p+ emitters of silicon solar cells
Author :
Cuevas, Andrés ; Merchán, Ramón ; Ramos, José Carlos ; King, Richard R.
Author_Institution :
Univ. Politecnica de Madrid, Spain
Abstract :
The contours of constant dark saturation current density, J0e , photogenerated current density lost by recombination, Jlost and sheet resistance, ρse, as a function of the surface dopant density and the thickness of the emitter are given for boron-doped regions, with application to silicon solar cells. Although similar calculations and graphs have already been published, the present ones have been generated using an updated value for the intrinsic carrier density, ni. Contour plots of the emitter-limited ideal solar cell efficiency are also included for the common case of a combined passivated/metal contacted surface. The latter plots show the main features of the optimum emitters
Keywords :
boron; carrier density; elemental semiconductors; minority carriers; silicon; solar cells; Si; Si:B; boron-doped regions; constant dark saturation current density; contour plots; emitter thickness; intrinsic carrier density; p+ emitters design; passivated/metal contacted surface; photogenerated current density; sheet resistance; silicon solar cells; solar cell efficiency; surface dopant density; Charge carrier density; Current density; Design optimization; Electric variables measurement; Energy measurement; Material properties; Photovoltaic cells; Silicon; Solar power generation; Surface resistance;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347165
