Title :
A f/sub T/=175 GHz carbon-doped base InP/InGaAs HBT
Author :
Jong-In Song ; Hong, W.-P. ; Palmstrom, C.J. ; Van Der Gaag, B.P. ; Kyung Bae Chough
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
We report the microwave characteristics of an InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor (HBT) utilizing a highly carbon-doped base grown by chemical beam epitaxy (CBE). The HBT having two 1.5/spl times/10 /spl mu/m/sup 2/ emitter fingers exhibited f/sub T/ and f/sub max(MAG)/ of 175 GHz and 70 GHz, respectively, at I/sub C/=40 mA and V/sub CE/=1.5 V. To our knowledge, the f/sub T/ of this device is the highest of any type of bipolar transistors yet reported. The results indicate the great potential of carbon-doped base InP/InGaAs HBTs for high-speed applications.<>
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; 1.5 V; 175 GHz; 40 mA; HBT; InP-InGaAs; InP/InGaAs; carbon-doped base; chemical beam epitaxy; emitter fingers; high-speed applications; microwave characteristics; Carbon dioxide; Current density; Diodes; Doping; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Metallization; Ohmic contacts; Wet etching;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347196
