A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor

Author

Kitagawa, M. ; Omura, I. ; Hasegawa, S. ; Inoue, T. ; Nakagawa, A.

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

679

Lastpage

682

Abstract

This paper proposes a new MOS-gate transistor structure (IEGT) for the first time, that realizes enhanced electron injection so that the carrier distribution takes a form similar to that of a thyristor and a low forward voltage drop is attained even for 4500 V devices. A developed simple analytical one dimensional model can predict a sufficiently accurate current voltage curve and clarifies a new design criterion for IEGT operation. A fabricated 4500 V IEGT realized a 2.5 V forward voltage drop at 100 A/cm/sup 2/. The IEGT had a current density over ten times that of conventional trench gate IGBT at 2.5 V forward voltage drop. An operation mode of IEGT has been theoretically and experimentally confirmed.<>

Keywords

current density; insulated gate bipolar transistors; power transistors; semiconductor device models; 4500 V; IEGT; MOS-gate transistor structure; carrier distribution; current density; current voltage curve; design criterion; enhanced electron injection; injection enhanced IGBT; insulated gate bipolar transistor; low forward voltage drop; one dimensional model; thyristor mode; Anodes; Cathodes; Charge carrier density; Charge carrier processes; Geometry; Insulated gate bipolar transistors; Low voltage; Research and development; Structural engineering; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347221

Filename

347221