Title :
Bi2Te3 thin films grown by MOCVD process
Author :
Boulouz, A. ; Giani, A. ; Pascal-Delannoy, F. ; Foucaran, A. ; Boyer, A.
Author_Institution :
Centre d´´Electron. et de Micro-Optoelectron., CNRS, Montpellier, France
Abstract :
The growth of Bi2Te3 thin films by metal organic chemical vapor deposition (MOCVD) using diethytellurium and trimethylbismuth as tellurium and bismuth sources respectively is investigated on pyrex substrates. The results of growth rate, morphology, electrical and thermoelectrical properties as a function of growth parameters are given. The prepared films were always n-type. Film properties, such as electrical resistivity, mobility, carrier concentration, thermoelectric power and X-ray diffraction were studied at 300 K. Increasing VI/V ratio was found to reduce the electrical resistivity to 12 μΩ.m. The Hall mobility varies from 28 and 150cm2/V.s. The figure-of-merit obtained was Z=2.48×10 -3 K-1. These initial results suggest a significant potential of MOCVD growth for large scale production of thermoelectric material
Keywords :
Hall mobility; bismuth compounds; carrier density; chemical vapour deposition; crystal morphology; electrical resistivity; semiconductor growth; semiconductor materials; semiconductor thin films; thermoelectric power; 12 muohmm; 300 K; Bi2Te3; Bi2Te3 thin films; Hall mobility; MOCVD process; VI/V ratio; X-ray diffraction; carrier concentration; diethytellurium; electrical properties; electrical resistivity; figure-of-merit; growth rate; metal organic chemical vapor deposition; mobility; morphology; n-type film; pyrex substrate; thermoelectric material; thermoelectric power; thermoelectrical properties; trimethylbismuth; Bismuth; Chemical vapor deposition; Electric resistance; MOCVD; Morphology; Organic chemicals; Sputtering; Substrates; Tellurium; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
Print_ISBN :
0-7803-4057-4
DOI :
10.1109/ICT.1997.667059
