Title :
Low-threshold AlGaAs/GaAs vertical-cavity surface-emitting laser on Si substrate at 300 K
Author :
Egawa, T. ; Jimbo, T. ; Umeno, M.
Author_Institution :
Res. Center for Micro-Structure Devices, Nagoya Inst. of Technol., Japan
Abstract :
Room-temperature pulsed AlGaAs/GaAs vertical-cavity surface-emitting laser (VCSEL) has been grown on Si substrate using metalorganic chemical vapor deposition. The VCSEL on Si consists of a single quantum well active layer and 20 pairs of AlAs/GaAs distributed Bragg reflectors (DBRs). The measured reflectivity of the 20 pairs of AlAs/GaAs DBR was 93% at the wavelength of 860 nm. The VCSEL on Si exhibits a threshold current of 79 mA and a threshold current density of 4.9 ka/cm/sup 2/ under pulsed condition at 300 K.<>
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; distributed Bragg reflector lasers; gallium arsenide; semiconductor growth; semiconductor lasers; 300 K; 79 mA; 860 nm; AlGaAs-GaAs; AlGaAs/GaAs; Si; Si substrate; VCSEL; distributed Bragg reflectors; metalorganic chemical vapor deposition; reflectivity; room-temperature pulsed laser; single quantum well active layer; threshold current; threshold current density; vertical-cavity surface-emitting laser; Chemical lasers; Chemical vapor deposition; Distributed Bragg reflectors; Gallium arsenide; Optical pulses; Pulsed laser deposition; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347232
