DocumentCode :
2313034
Title :
Accelerated Monte Carlo modeling of an RTCVD-reactor
Author :
Kersch, A. ; Morokoff, W.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
fYear :
1993
fDate :
5-8 Dec. 1993
Firstpage :
869
Lastpage :
872
Abstract :
Monte Carlo simulation is an indispensable tool for modeling Rapid Thermal Processes (RTP) with an accuracy of a few degrees. Only this method allows very detailed modeling of the physical processes and geometric complications which arise in real applications involving radiation transport. A well known disadvantage of the standard Monte Carlo method is slow convergence. A significant improvement in computation time, however, can be achieved by using Quasi-Monte Carlo (QMC) methods to simulate radiative heat transfer. We apply this method to the simulation of a RTCVD-reactor. Together with the solution of the conduction and convection problem with the simulator PHOENICS we achieve a detailed understanding of the transport mechanisms inside the reactor. The results demonstrate the necessity to include the effects of reflection law of radiation, spectral dependence and geometrical details to achieve a simulation of very high accuracy. The diffuse approximation is insufficient for that purpose.<>
Keywords :
Monte Carlo methods; chemical vapour deposition; heat radiation; heat transfer; rapid thermal processing; semiconductor process modelling; Monte Carlo simulation; PHOENICS simulator; RTCVD-reactor; accelerated Monte Carlo modeling; computation time; geometrical details; quasi-Monte Carlo methods; radiative heat transfer; rapid thermal processes; reflection law of radiation; spectral dependence; transport mechanisms; Acceleration; Atmospheric modeling; Computational modeling; Heat transfer; Inductors; Monte Carlo methods; Optical surface waves; Random sequences; Semiconductor device modeling; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-1450-6
Type :
conf
DOI :
10.1109/IEDM.1993.347262
Filename :
347262
Link To Document :
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