DocumentCode :
2313323
Title :
Interactions between Sn and Cu substrate with various surface finishes
Author :
Wei-Han Lai ; Han-Ting Shen ; Chao-Hong Wang
Author_Institution :
Dept. of Chem. Eng., Nat. Chung Cheng Univ., Chiayi, Taiwan
fYear :
2010
fDate :
20-22 Oct. 2010
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, the reaction couples were prepared to investigate the interaction between Sn and Cu substrate with various surface finishes. The studied interfacial systems contain Sn/Ni/Ag/Cu, Sn/Ag/Cu and Sn/Cu/Ag/Cu. The corresponding surface finish, Ag or Ni layer, is about 1~2μM. In the Sn/Ni/Ag/Cu reaction, the formed phase was Ni3Sn4 at first, indicating that Sn reacted with Ni at the Sn/Ni interface. Sequentially, as the limited Ni layer was consumed completely, Sn kept diffusing across the Ni3Sn4 and reacted with Ag layer to form Ag3Sn. Further, Sn diffused into Cu substrate and produced Cu6Sn5 and Cu3Sn. Meanwhile, Cu also diffused toward the opposite direction and then caused the prior Ni3Sn4 layer to gradually transform to (Cu, Ni)6Sn5. The (Cu, Ni)6Sn5 layer growth thickness depends on the initial Ni layer. Notably, the original continuous Ag3Sn layer became the discontinuous particulates and intercalated in-between (Cu, Ni)6Sn5 and Cu6Sn5. For comparison, the result in the Sn/Ag/Cu specimen revealed the Ag3Sn layer remained continuous and no Cu6Sn5 was accumulated at the Sn/Ag3Sn interface. Moreover, the total thickness of Cu6Sn5 and Cu3Sn layers in Sn/Ni/Ag/Cu is much smaller than that of the Sn/Cu. The initial reaction rate at the interface with the Ni/Ag surface finish is relatively slow. Nevertheless, after the Ag layer is consumed to form Ag3Sn, Cu would be induced by the Ni3Sn4 to rapidly form the thicker (Cu, Ni)6Sn5 layer.
Keywords :
copper alloys; intercalation compounds; substrates; surface chemistry; surface finishing; tin alloys; Sn-Ni-Ag-Cu; discontinuous particulates; intercalation; interfacial systems; substrate; surface finishes; Copper; Nickel; Soldering; Substrates; Surface finishing; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems Packaging Assembly and Circuits Technology Conference (IMPACT), 2010 5th International
Conference_Location :
Taipei
ISSN :
2150-5934
Print_ISBN :
978-1-4244-9783-6
Electronic_ISBN :
2150-5934
Type :
conf
DOI :
10.1109/IMPACT.2010.5699619
Filename :
5699619
Link To Document :
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