Title :
Evaluation of moisture induced hot-carrier degradation of N- and P-MOSFETs using steam stress
Author :
Lee, Y.-H. ; Hui, S. ; Sabi, B.
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
Steam stress was performed on N- and P-MOSFETs of a single-level metal process to simulate the backend process induced moisture penetration effect and the results of subsequent hot-carrier stresses were then compared with End-Of-Line (EOL) transistors of a triple-layer metal (M3) CMOS technology with different InterLayer Dielectric (ILD) processes. Our data showed good correlation between the effect of steam stress on M1 device and the water induced M3 device deterioration. Moisture penetration deteriorates N- and P-MOSFETs transistor characteristics and hot-carrier performance. The effect of hot-carrier moisture induced degradation is more severe on N-MOSFETs,.<>
Keywords :
CMOS integrated circuits; hot carriers; insulated gate field effect transistors; moisture; reliability; steam; N-MOSFETs; NMOS devices; P-MOSFETs; PMOS devices; backend process induced moisture penetration effect; hot-carrier stresses; interLayer dielectric processes; moisture induced hot-carrier degradation; single-level metal process; steam stress; transistor characteristics; triple-layer metal CMOS technology; Acceleration; CMOS process; CMOS technology; Degradation; Hot carrier effects; Hot carriers; Humidity; MOSFET circuits; Moisture; Stress;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347296
