Impact of plasma charging damage and diode protection on scaled thin oxide

Author

Hyungcheol Shin ; Zhi-Jian Ma ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

467

Lastpage

470

Abstract

The plasma charging stress can be quantified sensitively using differential pair circuits as well as MOSFETs. We have developed a quantitative model for thin oxide plasma charging damage by examining the oxide thickness dependence of charging current. The model predicts the oxide thickness dependence of plasma charging successfully. A quantitative model of protection diodes for wafer charging effect on future thinner oxides is also presented.<>

Keywords

MOS integrated circuits; electric breakdown of solids; equivalent circuits; insulated gate field effect transistors; protection; semiconductor device models; static electrification; MOSFETs; charging current; charging stress; differential pair circuits; diode protection; oxide thickness dependence; plasma charging damage; quantitative model; scaled thin oxide; wafer charging effect; Circuits; Diodes; MOSFETs; Plasma materials processing; Plasma properties; Plasma simulation; Protection; Semiconductor device modeling; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347309

Filename

347309