Title :
Submicron Schottky-collector AlAs/GaAs resonant tunnel diodes
Author :
Alien, S.T. ; Reddy, H. ; Rodwell, M.J.W. ; Smith, R.P. ; Martin, S.C. ; Lui, John C.S. ; Muller, R.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
0.1 /spl mu/m Schottky-collector AlAs/GaAs resonant tunnel diodes were fabricated; from their measured DC and microwave parameters, and including the effect of the quantum well lifetime, a maximum frequency of oscillation of 900 GHz is computed. To the authors´ knowledge this is the highest reported for any AlAs/GaAs resonant tunnel diode.<>
Keywords :
III-V semiconductors; Schottky-barrier diodes; aluminium compounds; equivalent circuits; gallium arsenide; negative resistance; resonant tunnelling devices; semiconductor device models; solid-state microwave devices; submillimetre wave devices; tunnel diodes; 0.1 micron; 900 GHz; AlAs-GaAs; DC parameters; THF; maximum frequency of oscillation; microwave parameters; quantum well lifetime; resonant tunnel diodes; submicron Schottky-collector RTD; Contact resistance; Electrons; Frequency; Gallium arsenide; Ohmic contacts; Resonant tunneling devices; Schottky barriers; Schottky diodes; Semiconductor diodes; Space technology;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347323
