Imaging periodic scarred states in InAs open quantum dots: Evidence of quantum darwinism

Author

Burke, A.M. ; Akis, R. ; Day, T.E. ; Speyer, G. ; Bennett, B.R. ; Ferry, D.K.

Author_Institution

Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

103

Lastpage

104

Abstract

Scanning gate microscopy (SGM) is used to image scar structures in an InAs open quantum dot, which is defined via electron beam lithography and wet etching. Periodicities in magnetic field are found within the scanned images and correlate to those observed in the conductance fluctuations. Simulations have shown that these magnetic transform images show striking resemblance to actual scars found in the dot that replicate through the conductance modes in direct agreement with the theory of quantum Darwinism.

Keywords

III-V semiconductors; electric admittance; electron beam lithography; etching; indium compounds; quantum theory; semiconductor quantum dots; surface structure; InAs; InAs open quantum dots; SGM; conductance fluctuations; conductance modes; electron beam lithography; magnetic field; magnetic transform images; periodic scarred states; periodicities; quantum Darwinism theory; scanned images; scanning gate microscopy; scar structures; wet etching; Birds; Lead; Magnetic confinement; Magnetic resonance imaging; Magnetic tunneling; Probes; Transforms;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699681

Filename

5699681