Title :
Fabrication and characterization of an undoped GaAs single hole transistor
Author :
Klochan, O. ; Chen, J.C.H. ; Micolich, A.P. ; Hamilton, A.R. ; Muraki, K. ; Hirayama, Y.
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device exhibits Coulomb blockade oscillations and shows stable electrical characteristics with little drift and improved noise performance.
Keywords :
Coulomb blockade; III-V semiconductors; aluminium compounds; gallium compounds; noise; semiconductor heterojunctions; single electron transistors; AlGaAs-GaAs; Coulomb blockade oscillations; improved noise performance; little drift; stable electrical characteristics; undoped AlGaAs-GaAs heterostructure; undoped GaAs single hole transistor; Gallium arsenide;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699687
