Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors

Author

Crabbe, E.F. ; Meyerson, B.S. ; Stork, J.M.C. ; Harame, D.L.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

83

Lastpage

86

Abstract

Bipolar transistors with phosphorus-doped emitters and sub-50 nm epitaxial bases have been fabricated in a low thermal-cycle process to explore the trade-offs between cutoff frequency, breakdown voltage and Early voltage. Record peak f/sub T/s of 73 GHz for a Si BJT and 113 GHz for a SiGe HBT with respective /spl beta/V/sub A/ products of 630 and 48,400 V were obtained for intrinsic base sheet resistances of 26 and 7 k/spl Omega/spl square/.<>

Keywords

Ge-Si alloys; bipolar transistors; elemental semiconductors; heterojunction bipolar transistors; semiconductor epitaxial layers; semiconductor materials; silicon; 113 GHz; 50 nm; 73 GHz; Si BJT; Si:P; SiGe HBT; SiGe:P; base sheet resistances; breakdown voltage; cutoff frequency; early voltage; epitaxial bases; fabrication; phosphorus-doped emitters; thermal-cycle; vertical profile optimization; very high frequency bipolar transistors; Annealing; Bipolar transistors; Breakdown voltage; Cutoff frequency; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Passivation; Silicon germanium; Surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347393

Filename

347393