DocumentCode :
2315170
Title :
Hydrogen platelet evolution in mechanically strained silicon
Author :
Pyke, D.J. ; Elliman, R.G. ; McCallum, J.C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
181
Lastpage :
182
Abstract :
The effect of intrinsic and applied stress on hydrogen diffusion and trapping are studied by elastic-recoil detection (ERD), Rutherford backscattering and channelling (RBS-C) and transmission electron microscopy (TEM).
Keywords :
Rutherford backscattering; diffusion; elemental semiconductors; hydrogen; internal stresses; silicon; transmission electron microscopy; Rutherford backscattering; Rutherford channelling; Si:H; TEM; elastic-recoil detection; hydrogen diffusion; hydrogen platelet; mechanically strained silicon; transmission electron microscopy; trapping; Artificial neural networks; Helium; Image coding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
ISSN :
1097-2137
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2010.5699728
Filename :
5699728
Link To Document :
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