Title :
A highly reliable metal-to-metal antifuse for high-speed field programmable gate arrays
Author :
Takagi, M.T. ; Yoshii, I. ; Ikeda, N. ; Yasuda, H. ; Hama, K.
Author_Institution :
Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
This paper describes a novel metal-to-metal antifuse technology for field programmable gate arrays which achieves very high performance and reliability while maintaining full CMOS compatibility. Plasma-CVD SiN with Si/N=1 and Al covered with TiN are used as an antifuse dielectric and electrodes, respectively. This structure allows a desirable characteristics for high-speed FPGAs with off-state reliability of 1.7/spl times/10/sup 5/ years.<>
Keywords :
capacitance; electrodes; logic arrays; reliability; 170000 y; Al; SiN; antifuse dielectric; electrodes; field programmable gate arrays; full CMOS compatibility; high-speed FPGAs; high-speed field programmable gate arrays; highly reliable metal-to-metal antifuse; off-state reliability; plasma-CVD SiN; reliability; very high performance; Breakdown voltage; Capacitance; Circuit optimization; Dielectric devices; Electrodes; Field programmable gate arrays; Fuses; Guidelines; Semiconductor device reliability; Virtual manufacturing;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347405
