DocumentCode :
2315267
Title :
Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics
Author :
Singh, Sirendra ; Jasieniak, Jacek ; Bown, Mark
Author_Institution :
Mater. Sci. & Eng., CSIRO, Melbourne, VIC, Australia
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
191
Lastpage :
192
Abstract :
We report on the use of sol-gel-processed amorphous oxides based on a (ZnxSny)Oz composition to develop thin-film transistors (TFTs) with electron mobility exceeding 1 cm2/Vs and high on/off ratios (>;106). These devices are aided by a high K dielectric developed by CSIRO, which enables reduced operating voltages to be achieved.
Keywords :
II-VI semiconductors; amorphous semiconductors; electron mobility; high-k dielectric thin films; semiconductor thin films; sol-gel processing; thin film transistors; tin compounds; wide band gap semiconductors; zinc compounds; (ZnxSny)Oz; electron mobility; high K dielectric; high performance metal oxide thin-film transistors; low-cost electronics; on-off ratio; sol-gel processing; transparent electronics; Dielectrics; Logic gates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
ISSN :
1097-2137
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2010.5699733
Filename :
5699733
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2315267
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