DocumentCode :
2316060
Title :
Mid-infrared InAsSb quantum dots with high emission efficiency
Author :
Lei, W. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
65
Lastpage :
66
Abstract :
Mid-infrared emission with high efficiency was achieved for InAsSb quantum dots by using InGaAsSb sandwich layers and InP carrier blocking layers. As a result of reduced quantum confinement and lattice mismatch around InAsSb quantum dots caused by InGaAsSb layers, an emission of 2.1 μm was obtained for the sample with In0.53Ga0.47As0.25Sb0.75 layers. The emission signal was observed up to 330 K by using InP carrier blocking layers to suppress the thermal escape of carriers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; multilayers; photoluminescence; semiconductor quantum dots; In0.53Ga0.47As0.25Sb0.75; In0.53Ga0.47As0.25Sb0.75 layers; InGaAsSb sandwich layers; InP; InP carrier blocking layers; emission efficiency; emission signal; lattice mismatch; mid-infrared InAsSb quantum dots; quantum confinement reduction; thermal escape suppression; wavelength 2.1 mum; Gallium; Indium gallium arsenide; Indium phosphide; Inductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
ISSN :
1097-2137
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2010.5699782
Filename :
5699782
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2316060
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