Title :
Fabrication of gated nanosize Si-tip arrays for high perveance electron beam applications
Author :
Lim, Sung-Hyun ; Jung, M.Y. ; Kim, D.W. ; Choi, Seong Sloo ; Jeon, H.
Author_Institution :
Dept. of Phys., Sun Moon Univ., Ahsan, South Korea
Abstract :
Summary form only given. Nanosize Si-tip arrays with gated electrodes have been fabricated using self-aligned method. In order to have parallel electron beam (high perveance beam) toward the anode plate, we have designed a nanosize tip array with heights of the tip slightly less than that of a gate electrode. High perveance beam is supposed to provide a better focusing of electron beams. Hence, it is important to have a high perveance electron beam for nano lithographic application.
Keywords :
electron beam focusing; electron field emission; elemental semiconductors; nanotechnology; silicon; vacuum microelectronics; Si; electron beam focusing; fabrication; gated electrode; nanosize Si tip field emission array; perveance; self-aligned method; Anodes; Apertures; Electrodes; Electron beam applications; Electron beams; Fabrication; Moon; Physics; Sputter etching; Sun;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728670