Title :
Fabrication of a novel polysilicon lateral field emission triode with a high current density and high-transconductance
Author :
Park, Dong Il ; Lee, Jae-Hoon ; Hahm, Sung-Ho ; Lee, Jong-Hyum ; Lee, Jung-Hee
Author_Institution :
Sch. of Electr. & Electron. Eng., Kyungpook Nat. Univ., Taegu, South Korea
Abstract :
In this study, we report on a lateral polysilicon field emission triode array fabricated using a SOI structure (Si/sub 3/N/sub 4//SiO/sub 2//poly-Si/SiO/sub 2/) and a LOCOS (local oxidation of polysilicon) process. The triode fabrication procedure is similar to that of the lateral field emission diode array based on SOI (silicon on insulator) structure with either silicon or polysilicon electrode.
Keywords :
electron field emission; elemental semiconductors; oxidation; silicon; silicon-on-insulator; triodes; vacuum microelectronics; LOCOS; SOI structure; Si/sub 3/N/sub 4/-SiO/sub 2/-Si-SiO/sub 2/; current density; fabrication; polysilicon lateral field emission triode array; transconductance; Anodes; Cathodes; Current density; Diodes; Electrodes; Etching; Fabrication; Field emitter arrays; Oxidation; Silicon;
Conference_Titel :
Vacuum Microelectronics Conference, 1998. Eleventh International
Conference_Location :
Asheville, NC, USA
Print_ISBN :
0-7803-5096-0
DOI :
10.1109/IVMC.1998.728685
