Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating

Author

Chi, Eung Joon ; Shim, Jae Yeob ; Baik, Hong Koo

Author_Institution

Dept. of Metall. Eng., Yonsei Univ., Seoul, South Korea

fYear

1998

fDate

19-24 July 1998

Firstpage

210

Lastpage

211

Abstract

To enhance the emission current of silicon field emitter, it has been coated with nitrogenated amorphous carbon (a-C:N) by helical resonator plasma enhanced chemical vapor deposition. The a-C:N film is amorphous and hydrogenated with about 30 at% hydrogen. Nitrogen is also included in the amorphous network. Nitrogen in the films reduces the optical band gap resulting in more efficient electron transport. The I-V characteristics show good F-N behavior for silicon and a-C:N coated emitters. a-C:N coating enhances significantly the emission current of silicon tips.

Keywords

carbon; electron field emission; elemental semiconductors; energy gap; nitrogen; plasma CVD coatings; silicon; Fowler-Nordheim plot; I-V characteristics; Si-C:N; electron emission; electron transport; field emitter; helical resonator plasma enhanced chemical vapor deposition; nitrogen doped amorphous carbon coating; optical band gap; silicon tip; Amorphous materials; Carbon dioxide; Electron emission; Nitrogen; Optical films; Optical resonators; Plasma chemistry; Plasma properties; Plasma transport processes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1998. Eleventh International

Conference_Location

Asheville, NC, USA

Print_ISBN

0-7803-5096-0

Type

conf

DOI

10.1109/IVMC.1998.728723

Filename

728723